Multi BSF layer InGaP/GaAs high efficiency solar cell (2024)

@inproceedings{e01a313648234bc8a22274647422e974,

title = "Multi BSF layer InGaP/GaAs high efficiency solar cell",

abstract = "Back Surface Field layer is very much important for both single and multi-junction solar cells for controlling the recombination rate. In this work multi BSF layers are used at both top and bottom cells to get higher external quantum efficiency from the cell. The work is done taking double junction InGaP/GaAs Solar cell and the optimization of the BSF layers is done using the computational numerical modeling with Silvaco ATLAS simulation technique. The structure, photo-generation rate, thickness of BSF layers is discussed in this paper. For this optimized cell structure, the maximum available short circuit current density is 17.35 mA/cm2 and is obtained at an open circuit voltage of 2.69 V which leads to a higher conversion efficiency.",

keywords = "Back surface field, External quantum Efficiency, Open circuit voltage, Short-circuit current density",

author = "Jivesh Verma and Pritam Dey and Ashish Prajapati and Das, {T. D.}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 11th International Conference on Intelligent Systems and Control, ISCO 2017 ; Conference date: 05-01-2017 Through 06-01-2017",

year = "2017",

month = feb,

day = "14",

doi = "10.1109/ISCO.2017.7855998",

language = "English",

series = "Proceedings of 2017 11th International Conference on Intelligent Systems and Control, ISCO 2017",

publisher = "Institute of Electrical and Electronics Engineers",

pages = "278--281",

booktitle = "Proceedings of 2017 11th International Conference on Intelligent Systems and Control, ISCO 2017",

address = "United States",

}

Multi BSF layer InGaP/GaAs high efficiency solar cell. / Verma, Jivesh; Dey, Pritam; Prajapati, Ashish et al.
Proceedings of 2017 11th International Conference on Intelligent Systems and Control, ISCO 2017. Institute of Electrical and Electronics Engineers, 2017. p. 278-281 7855998 (Proceedings of 2017 11th International Conference on Intelligent Systems and Control, ISCO 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Multi BSF layer InGaP/GaAs high efficiency solar cell

AU - Verma, Jivesh

AU - Dey, Pritam

AU - Prajapati, Ashish

AU - Das, T. D.

N1 - Publisher Copyright:© 2017 IEEE.

PY - 2017/2/14

Y1 - 2017/2/14

N2 - Back Surface Field layer is very much important for both single and multi-junction solar cells for controlling the recombination rate. In this work multi BSF layers are used at both top and bottom cells to get higher external quantum efficiency from the cell. The work is done taking double junction InGaP/GaAs Solar cell and the optimization of the BSF layers is done using the computational numerical modeling with Silvaco ATLAS simulation technique. The structure, photo-generation rate, thickness of BSF layers is discussed in this paper. For this optimized cell structure, the maximum available short circuit current density is 17.35 mA/cm2 and is obtained at an open circuit voltage of 2.69 V which leads to a higher conversion efficiency.

AB - Back Surface Field layer is very much important for both single and multi-junction solar cells for controlling the recombination rate. In this work multi BSF layers are used at both top and bottom cells to get higher external quantum efficiency from the cell. The work is done taking double junction InGaP/GaAs Solar cell and the optimization of the BSF layers is done using the computational numerical modeling with Silvaco ATLAS simulation technique. The structure, photo-generation rate, thickness of BSF layers is discussed in this paper. For this optimized cell structure, the maximum available short circuit current density is 17.35 mA/cm2 and is obtained at an open circuit voltage of 2.69 V which leads to a higher conversion efficiency.

KW - Back surface field

KW - External quantum Efficiency

KW - Open circuit voltage

KW - Short-circuit current density

UR - http://www.scopus.com/inward/record.url?scp=85015035421&partnerID=8YFLogxK

U2 - 10.1109/ISCO.2017.7855998

DO - 10.1109/ISCO.2017.7855998

M3 - Conference contribution

AN - SCOPUS:85015035421

T3 - Proceedings of 2017 11th International Conference on Intelligent Systems and Control, ISCO 2017

SP - 278

EP - 281

BT - Proceedings of 2017 11th International Conference on Intelligent Systems and Control, ISCO 2017

PB - Institute of Electrical and Electronics Engineers

T2 - 2017 11th International Conference on Intelligent Systems and Control, ISCO 2017

Y2 - 5 January 2017 through 6 January 2017

ER -